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Magazine Name : Ieee Transactions On Electron Devices

Year : 2004 Volume number : 51 Issue: 02

Large Grain Poly-Si (10 M) Tfts Prepared By Excimer Laser Annealing Through A Thick Sion Absorption Layer (Article)
Subject: Excimer Laser Annealing
Author: Sheng Da Liu     
page:      166 - 172
A Numerical Study Of Scaling Issues For Schottky-Barrier Carbon Nanotube Transistors (Article)
Subject: Carbon Nanotube Transistors
Author: Jing Guo     
page:      172 - 177
The Analysis Of Dark Signals In The Cmos Aps Imagers From The Characterization Of Test Structures (Article)
Subject: Cmos Active Pixel Sensor
Author: Hyuck Kwon     
page:      178 - 184
Noise Analysis Of High-Gain, Low-Noise Column Readout Circuits For Cmos Image Sensor (Article)
Subject: Complementary Metal-Oxide Semicconductor (Cmos) Image Sensor
Author: Nobuhiro Kawai     
page:      185 - 194
A Global Interconnect Optimization Scheme For Nanometer Scale Vlsi With Implications For Latency, Bandwidth, And Power Dissipation (Article)
Subject: Bandwidth
Author: Man Lung Mui     
page:      195 - 203
Large Domains Of Continuous Grain Silicon On Glass Substrate For High-Performance Tfts (Article)
Subject: Grain Boundaries
Author: Toshio Mizuki     
page:      204 - 211
Improved Off-Current And Subthreshold Slope In Aggressively Scaled Poly-Si Tfts With A Single Grain Boundary In The Channel (Article)
Subject: Defect , Device Simulation
Author: Philip M Walker     
page:      212 - 219
The Electrical And Material Characterization Of Hafnium Oxynitride Gate Dielectrics With Tan-Gate Electrode (Article)
Subject: Crystallinity
Author: Chang Seok Kang     
page:      220 - 227
A Simulation Study Of Gate Iine Edge Roughness Effects On Doping Profiles Of Short-Channel Mosfet Devices (Article)
Subject: Doping Profiles
Author: Shiying Xiong     
page:      228 - 232
Comparisons Of Conventional, 3-D, Optical, And Rf Interconnects For On-Chip Clock Distribution (Article)
Subject: Clock Distribution
Author: Kuan-Neng Chen     
page:      233 - 239
Silicon-On-Nothing Mosfets: Performance,Short-Channel Effects, And Backgate Coupling (Article)
Subject: Doping Modulation
Author: Jeremy Pretet     
page:      240 - 245
A New 2-D Model For The Potential Distribution And Threshold Voltage Of Fully Depleted Short-Channel Si-Sol Mesfets (Article)
Subject: Bottom Potential
Author: Prashant Pandey     
page:      246 - 254
An Efficient Noise Isolation Technique For Soc Application (Article)
Subject: Integrated Circuits
Author: Tung-Sheng Chen     
page:      255 - 260
Analytical Drain Thermal Noise Current Model Valid For Deep Submicron Mosfets (Article)
Subject: Carrier Heating
Author: Kwangseok Han     
page:      261 - 269
Cryogenic Capacitive Transimpedance Amplifier For Astronomical Infrared Detectors (Article)
Subject: Capacitive Transimpedance Amplifier
Author: H. Nagata     
page:      270 - 278
Vertical Tunnel Field-Effect Transistor (Article)
Subject: Band-To-Band -Tunneling
Author: Krishna Kumar Bhuwalka     
page:      279 - 295
A Numerical Study Of Scaling Issues For Schottky-Barrier Carbon Nanotube Transistors (Article)
Subject: Carbon Nanotube Transistors
Author: Jing Guo     
page:      - - -